NXP Semiconductors
1PS76SB10
Schottky barrier single diode
15
C
d
(pF)
10
msa891
5
0
0
10
20
V
R
(V)
30
f = 1 MHz; T
amb
= 25 °C
Fig. 3.
Diode capacitance as a function of reverse voltage; typical values
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
1.35
1.15
1
0.45
0.15
1.1
0.8
2.7
2.3
1.8
1.6
2
0.40
0.25
Dimensions in mm
0.25
0.10
03-12-17
Fig. 4.
SOD323
1PS76SB10
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
18 July 2012
4/8
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