Philips Semiconductors
1PS66SB62; 1PS76SB62
40 V, 20 mA low C
d
Schottky barrier diodes
5. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
R
I
F
T
j
T
amb
T
stg
reverse voltage
forward current
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
-
-
−65
−65
Max
40
20
125
+125
+150
Unit
V
mA
°C
°C
°C
6. Thermal characteristics
Table 7:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT666
SOD323
[1]
Conditions
in free air
Min
Typ
Max
Unit
-
-
-
-
700
450
K/W
K/W
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
Refer to SOT666 standard mounting conditions.
Reflow soldering is the only recommended soldering method.
Refer to SOD323 (SC-76) standard mounting conditions.
[2]
[3]
[4]
7. Characteristics
Table 8:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
I
R
C
d
[1]
Parameter
forward voltage
reverse current
diode capacitance
Conditions
I
F
= 2 mA; see
V
R
= 40 V; see
V
R
= 0 V; f = 1 MHz;
see
Min
-
-
-
Typ
-
-
-
Max
800
1
0.6
Unit
mV
µA
pF
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
9397 750 13845
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 24 November 2004
3 of 10
PHILIPS [ NXP SEMICONDUCTORS ]
