Philips Semiconductors
1PSxSB17
4 V, 30 mA low C
d
Schottky barrier diode
Table 6:
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−65
−65
Max
150
+150
+150
Unit
°C
°C
°C
6. Thermal characteristics
Table 7:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
ambient;
SOD323
SOD523
SOT666
[1]
Conditions
in free air
Min
Typ
Max
Unit
-
-
-
-
-
-
450
450
700
K/W
K/W
K/W
For Schottky barrier diodes, thermal run-away has to be considered as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
Refer to SOD323 (SC-76) standard mounting conditions.
Refer to SOD523 (SC-79) standard mounting conditions.
Refer to SOT666 standard mounting conditions.
[2]
[3]
[4]
7. Characteristics
Table 8:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
see
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
R
C
d
reverse current
diode
capacitance
V
R
= 3 V; see
see
V
R
= 0 V; f = 1 MHz
V
R
= 0.5 V; f = 1 MHz
[1]
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
Min
-
-
-
-
-
-
Typ
300
360
470
-
0.8
0.65
Max
350
450
600
250
1
-
Unit
mV
mV
mV
nA
pF
pF
9397 750 14587
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 06 — 4 April 2005
3 of 8
PHILIPS [ NXP SEMICONDUCTORS ]
