NXP Semiconductors
1PS302
Dual high-speed switching diode
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
T
amb
25
C
Min
-
-
55
65
Max
300
150
+150
+150
Unit
mW
C
C
C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Single diode loaded.
Double diode loaded.
T
j
= 25
C
before surge.
6. Thermal characteristics
Table 6.
Symbol
Per device
R
th(j-a)
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
Min
-
-
Typ
-
-
Max
415
200
Unit
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
R
reverse current
V
R
= 25 V
V
R
= 80 V
V
R
= 25 V; T
j
= 150
C
V
R
= 80 V; T
j
= 150
C
C
d
t
rr
V
FR
[1]
[2]
Parameter
Conditions
Min
-
-
-
-
-
-
-
-
-
Typ
610
740
-
-
-
-
-
-
-
-
-
Max
-
-
1.0
1.2
30
0.5
30
100
1.5
4
1.75
Unit
mV
mV
V
V
nA
A
A
A
pF
ns
V
diode capacitance
reverse recovery time
forward recovery voltage
f = 1 MHz; V
R
= 0 V
-
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA.
When switched from I
F
= 10 mA; t
r
= 20 ns.
1PS302
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 23 July 2012
3 of 11
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