NXP Semiconductors
1PS302
Dual high-speed switching diode
300
I
F
(mA)
200
(1)
(2)
(3)
006aac851
10
2
I
R
(μA)
10
mbg380
1
(1)
(2)
(3)
100
10
−1
0
0.0
10
−2
0.5
1.0
1.5
V
F
(V)
2.0
0
100
T
j
(°C)
200
(1) T
j
= 150
C;
typical values
(2) T
j
= 25
C;
typical values
(3) T
j
= 25
C;
maximum values
(1) V
R
= 80 V; maximum values
(2) V
R
= 80 V; typical values
(3) V
R
= 25 V; typical values
Fig 1.
Forward current as a function of forward
voltage
0.8
006aac852
Fig 2.
Reverse current as a function of junction
temperature
mbg443
300
I
F
(mA)
200
C
d
(pF)
0.6
(1)
0.4
(2)
100
0.2
0.0
0
4
8
12
V
R
(V)
16
0
0
100
T
amb
(°C)
200
f = 1 MHz; T
amb
= 25
C
FR4 PCB, standard footprint
(1) single diode loaded
(2) double diode loaded
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
Forward current as a function of ambient
temperature; derating curves
1PS302
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 23 July 2012
4 of 11
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