Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
see Fig.2
I
F
= 1 mA
I
F
= 30 mA
r
D
I
R
C
d
Note
1. Pulse test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60
µm
copper strip line.
Soldering
Reflow soldering is the only recommended soldering method.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
differential diode forward resistance
continuous reverse current
diode capacitance
f = 1 MHz; I
F
= 5 mA; see Fig.5
V
R
= 1 V; see Fig.3; note 1
V
R
= 0 V; f = 1 MHz; see Fig.4
−
−
12
−
1
TYP.
1PS10SB82
MAX.
340
700
−
0.2
−
UNIT
mV
mV
Ω
µA
pF
VALUE
500
UNIT
K/W
2003 Aug 20
3
PHILIPS [ NXP SEMICONDUCTORS ]
