Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES
•
Low forward voltage
•
Low diode capacitance
•
Leadless ultra small plastic package
(1.0 mm
×
0.6 mm
×
0.5 mm)
•
Boardspace 1.17 mm
2
(approx. 10% of SOT23)
•
Power dissipation comparable to SOT23.
APPLICATIONS
•
UHF mixers
•
Sampling circuits
•
Modulators
•
Phase detectors
•
Mobile communication, digital (still) cameras, PDA’s and
PCMCIA cards.
Marking code:
S5.
The marking bar indicates the cathode.
Bottom view
handbook, halfpage
1PS10SB82
DESCRIPTION
An epitaxial Schottky barrier diode encapsulated in a
SOD882 leadless ultra small plastic package.
ESD sensitive device, observe handling precautions.
MDB391
Fig.1 Simplified outline (SOD882), pin
configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
PARAMETER
−
−
−65
−
MIN.
MAX.
15
30
+150
150
V
mA
°C
°C
UNIT
2003 Aug 20
2
PHILIPS [ NXP SEMICONDUCTORS ]
