PE3335
Product Specification
Table 2. Absolute Maximum Ratings
Table 4. ESD Ratings
Symbol
Parameter/Conditions Min Max Units
Symbol
Parameter/Conditions
Level
Units
VDD
VI
Supply voltage
-0.3
-0.3
4.0
V
V
VESD
ESD voltage (Human Body
1000
V
Voltage on any input
VDD
+
Note 1: Periodically sampled, not 100% tested. Tested per MIL-
0.3
STD-883, M3015 C2
II
DC into any input
-10
-10
-65
+10
+10
150
mA
mA
°C
IO
DC into any output
Electrostatic Discharge (ESD) Precautions
Tstg
Storage temperature range
When handling this UltraCMOS™ device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the specified rating in Table 4.
Table 3. Operating Ratings
Symbol
Parameter/Conditions Min Max Units
VDD
Supply voltage
2.85
-40
3.15
85
V
Latch-Up Avoidance
TA
Operating ambient
temperature range
°C
Unlike conventional CMOS devices, UltraCMOS™
devices are immune to latch-up.
Table 5. DC Characteristics: VDD = 3.0 V, -40° C < TA < 85° C, unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Units
IDD
Operational supply current;
Prescaler disabled
VDD = 2.85 to 3.15 V
10
24
mA
mA
Prescaler enabled
31
Digital Inputs: All except fr, R0, Fin, Fin
VIH
VIL
IIH
High level input voltage
Low level input voltage
High level input current
Low level input current
VDD = 2.85 to 3.15 V
VDD = 2.85 to 3.15 V
VIH = VDD = 3.15 V
0.7 x VDD
V
V
0.3 x VDD
+70
µA
µA
IIL
VIL = 0, VDD = 3.15 V
-1
Reference Divider input: fr
IIHR High level input current
IILR Low level input current
R0 Input (Pull-up Resistor): R0
IIHRO High level input current
IILRO Low level input current
Counter output Dout
VIH = VDD = 3.15 V
+100
+5
µA
µA
VIL = 0, VDD = 3.15 V
-100
VIH = VDD = 3.15 V
µA
µA
VIL = 0, VDD = 3.15 V
-5
VOLD
VOHD
Output voltage LOW
Output voltage HIGH
Iout = 6 mA
Iout = -3 mA
0.4
V
V
VDD - 0.4
VDD - 0.4
Lock detect outputs: Cext, LD
VOLC
VOHC
VOLLD
Output voltage LOW, Cext
Iout = 100 mA
Iout = -100 mA
Iout = 6 mA
0.4
0.4
V
V
V
Output voltage HIGH, Cext
Output voltage LOW, LD
Charge Pump output: CP
ICP - Source Drive current
VCP = VDD / 2
-2.6
1.4
-1
-2
2
-1.4
2.6
mA
mA
µA
%
ICP – Sink
Drive current
VCP = VDD / 2
ICPL
Leakage current
1.0 V < VCP < VDD – 1.0 V
VCP = VDD / 2,
TA = 25° C
1
ICP – Source
Sink vs. source mismatch
15
15
vs. ICP Sink
ICP vs. VCP
Output current magnitude variation vs. voltage
V < VCP < VDD – 1.0 V
TA = 25° C
%
Document No. 70-0049-02 │ www.psemi.com
©2005 Peregrine Semiconductor Corp. All rights reserved.
Page 5 of 15
PSEMI [ Peregrine Semiconductor ]
