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UN5110 参数 Datasheet PDF下载

UN5110图片预览
型号: UN5110
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型 [Silicon PNP epitaxial planar type]
分类和应用:
文件页数/大小: 17 页 / 436 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
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UNR511x Series
Characteristics charts of UNR5115
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−160
I
B
= −1.0
mA
T
a
=
25°C
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
−80
0.4 mA
0.3 mA
0.2 mA
−40
0.1 mA
−100
V
CE(sat)
I
C
I
C
/ I
B
= 10
400
h
FE
I
C
V
CE
= −10
V
Collector current I
C
(mA)
−120
−10
Forward current transfer ratio h
FE
300
T
a
=
75°C
−1
T
a
=
75°C
0.1
25°C
200
25°C
−25°C
100
−25°C
−1
−10
−100
0
−1
−10
−100
−1
000
0
0
−2
−4
−6
−8
−10
−12
0.01
−0.1
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
IN
I
O
V
O
= −5
V
T
a
=
25˚C
−100
V
O
= −
0.2 V
T
a
=
25°C
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
−10
3
−10
3
−10
2
−1
2
−10
0.1
1
0
0.1
−1
−10
−100
−1
0.4
0.6
0.8
−1.0
−1.2
−1.4
0.01
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR5116
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−160
I
B
=
−1.0
mA
T
a
=
25°C
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
−80
0.4 mA
0.3 mA
−40
0.2 mA
0.1 mA
0
0
−2
−4
−6
−8
−10
−12
−100
V
CE(sat)
I
C
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
= −10
V
Collector current I
C
(mA)
−120
−10
Forward current transfer ratio h
FE
300
T
a
=
75°C
−1
T
a
=
75°C
0.1
25°C
200
25°C
−25°C
100
−25°C
−1
−10
−100
0
−1
−10
−100
−1
000
0.01
0.1
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00022BED
7