UNR511x Series
Characteristics charts of UNR5118
I
C
V
CE
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
h
FE
I
C
160
V
CE
= −10
V
−240
Collector current I
C
(mA)
−160
I
B
= −
1.0 mA
−
0.9 mA
−
0.8 mA
−
0.7 mA
−10
Forward current transfer ratio h
FE
−200
120
−120
−
0.6 mA
−
0.5 mA
−
0.4 mA
−
0.3 mA
−
0.2 mA
−
0.1 mA
0
0
−2
−4
−6
−8
−10
−12
−1
T
a
=
75°C
80
25°C
−25°C
40
T
a
=
75°C
25°C
−80
−
0.1
−25°C
−1
−10
−100
−40
−
0.01
−
0.1
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
IN
I
O
V
O
= −5
V
T
a
=
25°C
−100
V
O
= −
0.2 V
T
a
=
25°C
5
Output current I
O
(
µA
)
4
3
−10
2
Input voltage V
IN
(V)
−
0.6
−
0.8
−1.0
−1.2
−1.4
−10
3
−10
−1
2
−10
−
0.1
1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR5119
I
C
V
CE
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
160
h
FE
I
C
V
CE
= −10
V
−240
Collector current I
C
(mA)
−160
I
B
= −1.0
mA
−
0.9 mA
−
0.8 mA
−
0.7 mA
−10
Forward current transfer ratio h
FE
−200
120
T
a
=
75°C
80
−120
−1
T
a
=
75°C
25°C
−25°C
−80
−40
0
−
0.6 mA
−
0.5 mA
−
0.4 mA
−
0.3 mA
−
0.2 mA
−
0.1 mA
0
−2
−4
−6
−8
−10
−12
25°C
−
0.1
−25°C
−1
−10
−100
40
−
0.01
−
0.1
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00022BED
9
PANASONIC [ PANASONIC SEMICONDUCTOR ]
