UNR511x Series
■
Electrical Characteristics (continued)
T
a
=
25°C
±
3°C
Parameter
Resistance
ratio
UNR5114
UNR511H
UNR511T
UNR511F
UNR511V
UNR5111/5112/5113/511L
UNR511E
UNR511D
0.8
1.70
3.7
0.37
Symbol
Conditions
Min
0.17
0.17
Typ
0.21
0.22
0.47
0.47
1.0
1.0
2.14
4.7
1.2
2.60
5.7
0.57
Max
0.25
0.27
Unit
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
No-rank
160 to 460
Common characteristics chart
P
T
T
a
250
Total power dissipation P
T
(mW)
200
150
100
50
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
Characteristics charts of UNR5110
I
C
V
CE
T
a
=
25°C
I
B
= −1.0
mA
−
0.9 mA
−100
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−60
−
0.2 mA
−
0.1 mA
−20
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
–10 V
−120
−10
Forward current transfer ratio h
FE
Collector current I
C
(mA)
300
T
a
=
75°C
−1
T
a
=
75°C
25°C
−
0.1
−25°C
200
25°C
−25°C
−40
100
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00022BED
3
PANASONIC [ PANASONIC SEMICONDUCTOR ]
