“ZNR” Transient/Surge Absorbers (Type D)
■
Typical Characteristics
Voltage vs. Current
ERZV05D180 to ERZV05D680
Max.
400
Leakage Current
300
200
Max. Clamping Voltage
680
560
470
390
330
390
100
90
80
70
60
50
40
30
20
270
220
180
100
Impulse Derating
(Relation between impulse
width and impulse current multiple)
ERZV05D180 to ERZV05D680
1000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 10
6
times : 10 sec. interval
Voltage (V)
0
68
0
56
0
47
Impulse Current (A)
1
m
Ti
e
2
es
m
Ti
10
0
33
0
27
0
22
18
0
10
3
10
4
Ti
m
e
T
10
5
ime
s
10
6
Tim
s
Tim
es
es
10
10
Ti
es
m
es
2
Ti
m
10
9
8
7
6
5
4
3
10
–6
10
–5
10
–4
10
–3
10–
2
10
–1
10
0
Current (A)
Test current waveform
10
–6
to 10
–4
A: Direct current
10
–1
to 10
3
A: 8/20
µs
1
10
1
10
2
10
3
10
4
10
5
0.1
20
100
1000
Impulse Width (µs)
10000
ERZV05D820 to ERZV05D471
Max.
Leakage Current
Max. Clamping Voltage
ERZV05D820 to ERZV05D471
1000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 10
6
times : 10 sec. interval
2000
1000
900
800
700
600
500
400
Voltage (V)
300
431
391
361
471
431
391
361
331
271
241
221
201
1
100
10
es
s
Tim
ime
2
T
3
151
121
101
820
47
200
271
241
1
20
1
15
1
12
1
01
0
82
Surge Current (A)
Ti
10
4
me
s
Tim
10
5
es
Tim
10
es
10
1
m
Ti
10
e
10
6
2
es
Tim
Tim
es
100
90
80
70
60
50
40
30
10
-6
1
331
221
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
Current (A)
Test Current Waveform
10
-6
to 10
-4
A: Direct Current
10
-1
to 10
3
A: 8/20
µs
10
1
10
2
10
3
10
4
10
5
0.1
20
100
1000
Impulse Width (µs)
10000
Design and specifications are each subject to change without notice. Ask factory for the current technical specifications before purchase and/or use.
Should a safety concern arise regarding this product, please be sure to contact us immediately.
00 Sep. 2010
– 305 –
PANASONIC [ PANASONIC SEMICONDUCTOR ]
