“ZNR” Transient/Surge Absorbers (Type D)
■
Typical Characteristics
Voltage vs. Current
ERZV09D180 to ERZV09D680
400
300
200
Max.
Leakage Current
Max. Clamping Voltage
680
560
470
390
330
270
220
100
90
80
70
60
50
40
30
20
180
100
1
0
3
Impulse Derating
(Relation between impulse
width and impulse current multiple)
ERZV09D180 to ERZV09D680
1000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 10
6
times : 10 sec. interval
1
e
m
Ti
2
Impulse Current (A)
Voltage (V)
0
68
0
56
470
0
39
0
33
0
27
0
22
0
18
10
Ti
10
me
4
s
10
5
Tim
Tim
es
es
10
6
Tim
e
Ti
m
es
10
2
10
Ti
es
m
Ti
m
es
s
10
9
8
7
6
5
4
3
10
–6
1
Test current waveform
10
–6
to 10
–3
A: Direct current
10
–1
to 10
3
A: 8/20
µs
10
–5
10
–4
10
–3
10
–2
10
–1
10
0
Current (A)
10
1
10
2
10
3
10
4
10
5
0.1
20
100
1000
10000
Impulse Width (µs)
ERZV09D820 to ERZV09D511
Max.
Leakage Current
Max. Clamping Voltage
511
471
431
391
361
331
271
241
221
201
151
ERZV09D820 to ERZV09D511
10000
2 times : 5 min. interval
up to 10 times : 2 min. interval
up to 10
6
times : 10 sec. interval
2000
1000
900
800
700
600
500
Voltage (V)
400
300
471
431
391
361
1000
10
es
es
Tim
Tim
es
2
im
3
T
10
10
e
im
1T
511
Surge Current (A)
121
101
820
10
4
2T
100
200
271
241
m
10
5
es
Tim
es
Ti
es
im
100
90
80
70
60
50
40
30
10
-6
331
221
10
-5
201
151
121
101
820
10
6
10
Tim
es
Test Current Waveform
10
-6
to 10
-3
A: Direct Current
10
-1
to 10
4
A: 8/20
µs
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
5
1
20
100
1000
Impulse Width (µs)
10000
Current (A)
Design and specifications are each subject to change without notice. Ask factory for the current technical specifications before purchase and/or use.
Should a safety concern arise regarding this product, please be sure to contact us immediately.
00 Sep. 2010
– 309 –
PANASONIC [ PANASONIC SEMICONDUCTOR ]
