This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0709A
NF
I
E
6
20
NF
I
E
V
CB
= −5
V
f
=
1 kHz
R
g
=
2 kΩ
T
a
=
25°C
V
CB
= −5
V
R
=
50 kΩ
18
g
T
a
=
25°C
16
h Parameter
I
E
V
CE
= −5
V
f
=
270 Hz
T
a
=
25°C
5
h
fe
100
Noise figure NF (dB)
Noise figure NF (dB)
4
14
12
10
8
6
4
2
h Parameter
f
=
100 Hz
1 kHz
h
oe
(µS)
M
Di ain
sc te
on na
tin nc
ue e/
d
3
10
2
10 kHz
h
ie
(kΩ)
0
0.01
0.1
1
10
Emitter current I
E
(mA)
h Parameter
V
CE
h
fe
I
E
=
2 mA
f
=
270 Hz
T
a
=
25°C
100
h
oe
(µS)
10
h
re
(× 10
−4
)
h
ie
(kΩ)
1
−1
−10
−100
M
ain
te
na
nc
e/
Di
sc
on
tin
ue
Collector-emitter voltage V
CE
(V)
Pl
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se
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tp t f
:// ol d d d nte inte llow
ww lo is is na n
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w. win con con nce anc ng f
se g U tin tin t e ou
m R ue ue yp typ r P
ico L d d e
e
ro
ab ty ty
n.
du
pa ou pe pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
0
0.1
1
10
1
1
0.1
h
re
(× 10
−4
)
1
10
Emitter current I
E
(mA)
Emitter current I
E
(mA)
h Parameter
SJC00047BED
3
PANASONIC [ PANASONIC SEMICONDUCTOR ]
