This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0709A
P
C
T
a
240
−120
I
C
V
CE
T
a
=
25°C
I
C
I
B
−60
V
CE
= −5
V
T
a
=
25°C
Collector power dissipation P
C
(mW)
200
−100
−50
Collector current I
C
(mA)
160
−80
I
B
= −300 µA
−60
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
Collector current I
C
(mA)
−40
40
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
I
B
V
BE
−350
−300
−250
−200
−150
−100
−50
0
V
CE
= −5
V
T
a
=
25°C
V
CE
= −5
V
−200
25°C
Collector current I
C
(mA)
T
a
=
75°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
−400
0
−
0.4
−
0.8
−1.2
−1.6
h
FE
I
C
sc
on
tin
ue
Base-emitter voltage V
BE
(V)
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
600
te
na
nc
e/
V
CE
= −10
V
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
500
400
ain
T
a
=
75°C
300
25°C
−25°C
200
100
0
−1
−10
−100
−1
000
Collector current I
C
(mA)
2
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ge
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n/ tio
.
n.
0
0
−2
−4
−6
−8
−10
−12
M
Di ain
sc te
on na
tin nc
ue e/
d
120
−30
80
−40
−20
−20
−10
0
0
−100
−200
−300
−400
Collector-emitter voltage V
CE
(V)
Base current I
B
(
µA
)
I
C
V
BE
V
CE(sat)
I
C
−240
−10
I
C
/ I
B
=
10
−1
Base current I
B
(
µA
)
−160
T
a
=
75°C
25°C
−25°C
−120
−
0.1
−80
−
0.01
−40
0
0
−
0.4
−
0.8
−1.2
−1.6
−2.0
−
0.001
−1
−10
−100
−1
000
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
f
T
I
E
C
ob
V
CB
Di
160
140
120
100
80
60
40
20
V
CB
= −10
V
T
a
=
25°C
8
7
6
5
4
3
2
1
I
E
=
0
f
=
1 MHz
T
a
=
25°C
M
0
0.1
1
10
100
0
−1
−10
−100
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
SJC00047BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
