This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SB0709A
(2SB709A)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD0601A (2SD601A)
■
Features
0.40
+0.10
–0.05
3
Unit: mm
0.16
+0.10
–0.06
M
Di ain
sc te
on na
tin nc
ue e/
d
1.50
+0.25
–0.05
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
T
stg
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
f
T
ue
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
te
na
nc
e/
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
V
CE(sat)
C
ob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Marking symbol
Q
160 to 260
BQ
R
210 to 340
BR
S
290 to 460
BS
No-rank
160 to 460
B
M
Collector output capacitance
(Common base, input open circuited)
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2003
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1
2
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
10˚
Rating
−45
−45
−7
Unit
V
V
1.1
+0.2
–0.1
(0.65)
•
High forward current transfer ratio h
FE
•
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
2.8
+0.2
–0.3
1.1
+0.3
–0.1
V
−100
−200
200
150
mA
mA
°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
mW
°C
Marking Symbol: B
−55
to
+150
Conditions
Min
−45
−7
−45
Typ
0 to 0.1
Max
Unit
V
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
sc
on
tin
V
V
V
CB
= −20
V, I
E
=
0
V
CE
= −10
V, I
B
=
0
−
0.1
−100
460
µA
V
Di
µA
V
CE
= −10
V, I
C
= −2
mA
160
I
C
= −100
mA, I
B
= −10
mA
−
0.3
80
2.7
−
0.5
ain
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
MHz
pF
Note) The part number in the parenthesis shows conventional part number.
SJD00047BED
0.4
±0.2
5˚
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
