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PZT2907A 参数 Datasheet PDF下载

PZT2907A图片预览
型号: PZT2907A
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管表面贴装 [PNP SILICON TRANSISTOR SURFACE MOUNT]
分类和应用: 晶体晶体管IOT
文件页数/大小: 6 页 / 142 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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PZT2907AT1
TYPICAL ELECTRICAL CHARACTERISTICS
1000
TJ = 125°C
hFE, CURRENT GAIN
TJ = 25°C
100
TJ = – 55°C
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
1000
100
VCE = – 20 V
TJ = 25°C
10
–1.0
–10
–100
IC, COLLECTOR CURRENT (mA)
–1000
10
– 0.1
–1.0
–10
–100
IC, COLLECTOR CURRENT (mA)
–1000
Figure 3. DC Current Gain
Figure 4. Current Gain Bandwidth Product
–1.0
TJ = 25°C
– 0.8
VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
CAPACITANCE (pF)
30
20
Ceb
10
7.0
5.0
Ccb
– 0.6
VBE(on) @ VCE = –10 V
– 0.4
– 0.2
VCE(sat) @ IC/IB = 10
0
– 0.1 – 0.2 – 0.5 –1.0 – 2.0 – 5.0 –10 – 20 – 50 –100 – 200
IC, COLLECTOR CURRENT (mA)
– 500
3.0
2.0
– 0.1
– 0.2 – 0.3 – 0.5 – 0.7 –1.0 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30
REVERSE VOLTAGE (VOLTS)
Figure 5. “ON” Voltage
Figure 6. Capacitances
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3