PZT2907AT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(2)
DC Current Gain
(IC = – 0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)
(IC = – 500 mAdc, VCE = –10 Vdc)
Collector-Emitter Saturation Voltages
(IC = –150 mAdc, IB = –15 mAdc)
(IC = – 500 mAdc, IB = – 50 mAdc)
Base-Emitter Saturation Voltages
(IC = –150 mAdc, IB = –15 mAdc)
(IC = – 500 mAdc, IB = – 50 mAdc)
hFE
75
100
100
100
50
VCE(sat)
—
—
VBE(sat)
—
—
—
—
–1.3
– 2.6
—
—
– 0.4
–1.6
Vdc
—
—
—
—
—
—
—
—
300
—
Vdc
—
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product (IC = – 50 mAdc, VCE = – 20 Vdc, f = 100 MHz)
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = – 2.0 Vdc, IC = 0, f = 1.0 MHz)
fT
Cc
Ce
200
—
—
—
—
—
—
8.0
30
MHz
pF
pF
SWITCHING TIMES
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
2. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle = 2.0%.
(VCC = – 6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = –15 mAdc)
(VCC = – 30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc)
ton
td
tr
toff
ts
tf
—
—
—
—
—
—
—
—
—
—
—
—
45
10
40
100
80
30
ns
ns
– 30 V
INPUT
Zo = 50
Ω
PRF = 150 Hz
RISE TIME
≤
2.0 ns
0
– 16 V
200 ns
50
INPUT
Zo = 50
Ω
PRF = 150 Hz
RISE TIME
≤
2.0 ns
0
– 30 V
50
200 ns
+15 V
– 6.0 V
200
1.0 k
37
1.0 k
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
1.0 k
TO OSCILLOSCOPE
RISE TIME
≤
5.0 ns
1N916
Figure 1. Delay and Rise
Time Test Circuit
Figure 2. Storage and Fall
Time Test Circuit
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ONSEMI [ ON SEMICONDUCTOR ]
