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PZT2907A 参数 Datasheet PDF下载

PZT2907A图片预览
型号: PZT2907A
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管表面贴装 [PNP SILICON TRANSISTOR SURFACE MOUNT]
分类和应用: 晶体晶体管IOT
文件页数/大小: 6 页 / 142 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by PZT2907AT1/D
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in linear and
switching applications. The device is housed in the SOT-223 package which is
designed for medium power surface mount applications.
NPN Complement is PZT2222AT1
The SOT-223 package can be soldered using wave or reflow
SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering eliminating the possibility of
damage to the die.
Available in 12 mm tape and reel
Use PZT2907AT1 to order the 7 inch/1000 unit reel.
Use PZT2907AT3 to order the 13 inch/4000 unit reel.
PZT2907AT1
Motorola Preferred Device
SOT-223 PACKAGE
PNP SILICON
TRANSISTOR
SURFACE MOUNT
COLLECTOR
2,4
1
2
3
4
BASE 1
3
EMITTER
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
Operating and Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ, Tstg
Value
– 60
– 60
– 5.0
– 600
1.5
12
– 65 to 150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted)
Lead Temperature for Soldering, 0.0625″ from case
Time in Solder Bath
R
θJA
TL
83.3
260
10
°C/W
°C
Sec
DEVICE MARKING
P2F
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = –10
µAdc,
IE = 0)
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Emitter-Base Breakdown Voltage (IE = –10
µAdc,
IC = 0)
Collector-Base Cutoff Current (VCB = – 50 Vdc, IE = 0)
Collector-Emitter Cutoff Current (VCE = – 30 Vdc, VBE = 0.5 Vdc)
Base-Emitter Cutoff Current (VCE = – 30 Vdc, VBE = – 0.5 Vdc)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IBEX
– 60
– 60
– 5.0
°—°
°—°
°—°
–10
– 50
– 50
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 4
Motorola Small–Signal
©
Motorola, Inc. 1996
Transistors, FETs and Diodes Device Data
1