NVTYS029N08H
TYPICAL CHARACTERISTICS
1000
100
10
C
9
8
7
ISS
6
5
4
3
C
Q
Q
GD
OSS
GS
10
1
V
= 0 V
V
DS
= 40 V
GS
C
2
RSS
T = 25°C
T = 25°C
J
J
1
0
f = 1 MHz
I = 10 A
D
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
6
7
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
10
100
10
V
GS
= 0 V
T = 175°C
J
T = 150°C
J
t
d(off)
T = 125°C
J
t
d(on)
T = 25°C
J
t
f
1
1
V
= 10 V
= 64 V
t
r
GS
V
DS
I
D
= 10 A
T = −55°C
J
0.1
0.1
1
10
R , GATE RESISTANCE (W)
0.3 0.5 0.7
0.9
1.1
1.3
1.5
1.7
1.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
100
10
T
= 25°C
C
Single Pulse
≤ 10 V
V
GS
T
= 25°C
J(initial)
T
= 100°C
J(initial)
1
10 ms
0.5 ms
1 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
0.1
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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