MOSFET – Power, Single
N-Channel
80 V, 32.4 mW, 21 A
NVTYS029N08H
Features
www.onsemi.com
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
80 V
32.4 mW @ 10 V
21 A
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
N−Channel
D (5 − 8)
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
21
A
C
D
G (4)
q
JC
T
C
15
(Notes 1, 2, 3, 4)
Steady
State
Power Dissipation
T
C
P
33
W
A
D
S (1, 2, 3)
R
(Notes 1, 2, 3)
q
JC
T
C
= 100°C
16.5
6.4
4.5
3.1
1.5
81
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
T = 100°C
A
(Notes 1, 3, 4)
Steady
State
Power Dissipation
T = 25°C
A
P
W
D
LFPAK8
3.3x3.3
CASE 760AD
R
(Notes 1, 3)
q
JA
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
MARKING DIAGRAM
Source Current (Body Diode)
I
26
A
S
029N
08H
AWLYW
Single Pulse Drain−to−Source Avalanche
E
AS
27.5
mJ
Energy (I
= 1 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
107
°C
029N08H = Specific Device Code
= Assembly Location
WL = Wafer Lot
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
= Year
W
= Work Week
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
4.6
Unit
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
R
°C/W
q
JC
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
R
49.1
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which substantially
less than 100% of the heat flows to single case surface.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
April, 2021 − Rev. 0
NVTYS029N08H/D
ONSEMI [ ONSEMI ]
