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NVTYS029N08HTWG 参数 Datasheet PDF下载

NVTYS029N08HTWG图片预览
型号: NVTYS029N08HTWG
PDF下载: 下载PDF文件 查看货源
内容描述: [MOSFET – Power, Single, N-Channel,]
分类和应用:
文件页数/大小: 7 页 / 333 K
品牌: ONSEMI [ ONSEMI ]
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NVTYS029N08H  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
DraintoSource Breakdown Voltage  
V
V
GS  
= 0 V, I = 250 mA  
80  
V
(BR)DSS  
D
DraintoSource Breakdown Voltage  
Temperature Coefficient  
V
/T  
J
I
D
= 250 mA, ref to 25°C  
60.6  
mV/°C  
(BR)DSS  
Zero Gate Voltage Drain Current  
I
T = 25°C  
10  
mA  
DSS  
J
V
= 0 V,  
GS  
DS  
V
= 80 V  
T = 125°C  
J
250  
100  
GatetoSource Leakage Current  
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
I
V
= 0 V, V = 20 V  
nA  
GSS  
DS  
GS  
V
V
= V , I = 20 mA  
2.0  
4
V
GS(TH)  
GS  
DS  
D
Negative Threshold Temperature  
Coefficient  
V
/T  
I = 20 mA, ref to 25°C  
D
8.3  
mV/°C  
GS(TH)  
J
DraintoSource On Resistance  
Forward Transconductance  
CHARGES AND CAPACITANCES  
Input Capacitance  
R
V
= 10 V, I = 5 A  
26.8  
22  
32.4  
mW  
DS(on)  
GS  
D
g
FS  
V
DS  
= 15 V, I = 10 A  
S
D
C
369  
57  
pF  
nC  
iss  
V
= 0 V, f = 1.0 MHz,  
GS  
Output Capacitance  
C
oss  
V
DS  
= 40 V  
Reverse Transfer Capacitance  
Threshold Gate Charge  
GatetoSource Charge  
GatetoDrain Charge  
C
4
rss  
Q
1.2  
1.8  
1.6  
6.3  
G(TH)  
Q
V
V
= 10 V, V = 40 V, I = 10 A  
DS D  
GS  
GS  
Q
GD  
Total Gate Charge  
Q
= 10 V, V = 40 V, I = 10 A  
nC  
ns  
G(TOT)  
GS  
DS  
D
SWITCHING CHARACTERISTICS (Note 6)  
TurnOn Delay Time  
Rise Time  
t
6.6  
1.5  
11  
2
d(on)  
t
r
V
= 10 V, V = 64 V,  
DS  
GS  
I
D
= 10 A, R = 3 W  
G
TurnOff Delay Time  
Fall Time  
t
d(off)  
t
f
DRAINSOURCE DIODE CHARACTERISTICS  
Forward Diode Voltage  
V
T = 25°C  
0.8  
0.7  
25  
19  
6
1.2  
V
SD  
J
V
= 0 V,  
GS  
S
I
= 5 A  
T = 125°C  
J
Reverse Recovery Time  
Charge Time  
t
ns  
RR  
t
t
a
V
GS  
= 0 V, dl /dt = 100 A/ms,  
S
I
S
= 10 A  
Discharge Time  
b
Reverse Recovery Charge  
Q
18  
nC  
RR  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.  
6. Switching characteristics are independent of operating junction temperatures.  
www.onsemi.com  
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