NVTYS029N08H
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
80
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I
D
= 250 mA, ref to 25°C
60.6
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
10
mA
DSS
J
V
= 0 V,
GS
DS
V
= 80 V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 20 mA
2.0
4
V
GS(TH)
GS
DS
D
Negative Threshold Temperature
Coefficient
V
/T
I = 20 mA, ref to 25°C
D
−8.3
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
R
V
= 10 V, I = 5 A
26.8
22
32.4
mW
DS(on)
GS
D
g
FS
V
DS
= 15 V, I = 10 A
S
D
C
369
57
pF
nC
iss
V
= 0 V, f = 1.0 MHz,
GS
Output Capacitance
C
oss
V
DS
= 40 V
Reverse Transfer Capacitance
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
C
4
rss
Q
1.2
1.8
1.6
6.3
G(TH)
Q
V
V
= 10 V, V = 40 V, I = 10 A
DS D
GS
GS
Q
GD
Total Gate Charge
Q
= 10 V, V = 40 V, I = 10 A
nC
ns
G(TOT)
GS
DS
D
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
6.6
1.5
11
2
d(on)
t
r
V
= 10 V, V = 64 V,
DS
GS
I
D
= 10 A, R = 3 W
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.7
25
19
6
1.2
V
SD
J
V
= 0 V,
GS
S
I
= 5 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
a
V
GS
= 0 V, dl /dt = 100 A/ms,
S
I
S
= 10 A
Discharge Time
b
Reverse Recovery Charge
Q
18
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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