NVMTS4D3N15MC
TYPICAL CHARACTERISTICS
10K
1K
10
C
ISS
Q
9
8
7
6
5
4
3
2
G(TOT)
C
OSS
Q
Q
GD
GS
100
10
1
C
V
I
= 75 V
= 95 A
V
= 0 V
RSS
DS
GS
T = 25°C
D
J
1
0
T = 25°C
J
f = 1 MHz
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1K
1K
100
10
V
V
= 10 V
= 75 V
= 95 A
V
GS
= 0 V
GS
DS
I
D
t
r
100
t
d(off)
t
f
t
d(on)
10
1
T = 175°C
T = 150°C
J
J
1
T = 25°C
J
T = −55°C
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.2 0.3
0.4
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.5
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
10
1
10 ms
T
= 25°C
J(initial)
T
= 125°C
J(initial)
T
= 25°C
C
0.5 ms
1 ms
Single Pulse
≤ 10 V
V
GS
1
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
1000
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (sec)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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