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NVMTS4D3N15MC 参数 Datasheet PDF下载

NVMTS4D3N15MC图片预览
型号: NVMTS4D3N15MC
PDF下载: 下载PDF文件 查看货源
内容描述: [Single N-Channel Power MOSFET 000V, 000A, 0.0mΩ]
分类和应用:
文件页数/大小: 8 页 / 294 K
品牌: ONSEMI [ ONSEMI ]
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NVMTS4D3N15MC  
THERMAL RESISTANCE RATINGS  
Symbol  
Parameter  
Max  
0.5  
Unit  
JunctiontoCase – Steady State (Note 2)  
JunctiontoAmbient – Steady State (Note 2)  
°C/W  
R
q
JC  
JA  
R
31.4  
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Symbol  
Parameter  
Test Condition  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
V
DraintoSource Breakdown Voltage  
V
= 0 V, I = 250 mA  
150  
V
(BR)DSS  
GS  
D
V
/ T  
DraintoSource Breakdown Voltage  
Temperature Coefficient  
I = 250 mA, ref to 25°C  
D
49.84  
mV/°C  
(BR)DSS  
J
I
Zero Gate Voltage Drain Current  
V
V
= 0 V,  
T = 25°C  
1
mA  
mA  
nA  
DSS  
GS  
DS  
J
= 120 V  
T = 125°C  
J
10  
100  
I
GatetoSource Leakage Current  
V
= 0 V, V =  
GS  
20 V  
GSS  
DS  
GS  
ON CHARACTERISTICS (Note 3)  
V
Gate Threshold Voltage  
V
= V , I = 521 mA  
2.5  
3.6  
9.93  
3.4  
4.5  
V
GS(TH)  
DS  
D
V
/ T  
J
Negative Threshold Temperature Coefficient  
DraintoSource On Resistance  
I = 250 mA, ref to 25°C  
D
mV/°C  
mW  
GS(TH)  
R
V
GS  
= 10 V, I = 95 A  
4.45  
DS(on)  
D
g
Forward Transconductance  
V
= 5 V, I = 95 A  
177  
1.1  
S
FS  
DS  
D
R
GateResistance  
T = 25°C  
A
W
G
CHARGES & CAPACITANCES  
C
Input Capacitance  
V
V
= 0 V, f = 1 MHz,  
= 75V  
6514  
1750  
12.5  
79  
pF  
nC  
ISS  
GS  
DS  
C
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
OSS  
RSS  
C
Q
V
D
= 10 V, V = 75 V,  
DS  
= 95 A  
G(TOT)  
GS  
I
Q
Threshold Gate Charge  
GatetoSource Charge  
GatetoDrain Charge  
Plateau Voltage  
21  
G(TH)  
V
D
= 10 V, V = 75 V,  
GS  
DS  
I
= 95 A  
Q
36  
GS  
GD  
GP  
Q
V
11  
5.8  
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)  
GS  
t
TurnOn Delay Time  
Rise Time  
V
D
= 10 V, V =75 V,  
38  
11  
48  
8
ns  
d(ON)  
GS  
DS  
I
= 95 A, R = 6 W  
G
t
r
t
TurnOff Delay Time  
Fall Time  
d(OFF)  
t
f
DRAINSOURCE DIODE CHARACTERISTICS  
V
Forward Diode Voltage  
V
S
= 0 V,  
T = 25°C  
0.86  
0.80  
85  
1.2  
V
SD  
GS  
J
I
= 95 A  
T = 125°C  
J
t
Reverse Recovery Time  
Charge Time  
V
S
= 0 V, dI /dt = 100 A/ms,  
= 95 A  
ns  
RR  
GS  
S
I
t
t
58  
a
Discharge Time  
38  
b
Q
Reverse Recovery Charge  
194  
nC  
RR  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
3. Switching characteristics are independent of operating junction temperatures  
www.onsemi.com  
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