NTTFS015N04C
TYPICAL CHARACTERISTICS
10K
1K
10
9
8
7
C
ISS
Q
Q
GD
GS
6
5
4
3
2
C
OSS
100
C
10
1
RSS
V
= 0 V
V
= 20 V
GS
DS
T = 25°C
T = 25°C
J
J
1
0
f = 1 MHz
I
D
= 7.5 A
0
10
20
30
40
0
1
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
8
7
6
5
4
3
V
GS
= 0 V
V
V
I
= 10 V
= 20 V
= 7.5 A
GS
DS
t
D
r
t
d(off)
10
t
d(on)
t
f
T = 125°C
J
2
1
T = −55°C
T = 25°C
J
J
1
1
10
R , GATE RESISTANCE (W)
100
0.5
0.6
0.7
0.8
0.9
1.0
V
, SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
T
= 25°C
C
Single Pulse
≤ 10 V
V
GS
100
10
10 ms
T
= 25°C
J(initial)
1
0.5 ms
1 ms
10 ms
DC
1
R
Limit
T
= 100°C
DS(on)
J(initial)
Thermal Limit
Package Limit
0.1
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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