NTTFS015N04C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
V
= 0 V, I = 250 mA
40
V
(BR)DSS
GS
D
I
T = 25°C
10
mA
DSS
J
V
= 0 V,
= 40 V
GS
DS
V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 20 mA
2.5
3.5
V
mW
S
GS(TH)
GS
DS
D
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
R
V
V
= 10 V, I = 7.5 A
14.4
2
17.3
DS(on)
GS
D
g
FS
= 15 V, I = 7.5 A
DS
D
C
325
165
10
pF
nC
iss
V
GS
= 0 V, f = 1.0 MHz,
Output Capacitance
C
oss
V
DS
= 25 V
Reverse Transfer Capacitance
Threshold Gate Charge
C
rss
Q
1.3
2.0
1.2
6.3
G(TH)
Gate−to−Source Charge
Gate−to−Drain Charge
Q
V
V
= 10 V, V = 20 V, I = 7.5 A
DS D
GS
GS
Q
GD
Total Gate Charge
Q
= 10 V, V = 20 V, I = 7.5 A
nC
ns
G(TOT)
GS
DS
D
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
7
d(on)
t
r
13
14
4.5
V
GS
= 10 V, V = 20 V,
DS
I
D
= 7.5 A
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.84
0.72
18
7
1.2
V
SD
J
V
S
= 0 V,
GS
I
= 7.5 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
a
V
GS
= 0 V, dl /dt = 100 A/ms,
S
I
S
= 7.5 A
Discharge Time
11
b
Reverse Recovery Charge
Q
6
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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