NSS1C200MZ4, NSV1C200MZ4
TYPICAL CHARACTERISTICS
1.2
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 2 V
1.0
0.8
−55°C
0.6
0.4
0.2
25°C
1
3.0 A
1.0 A
0.5 A
0.1
I
C
= 0.1 A
2.0 A
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
150°C
0.001
0.01
0.1
1
10
0.01
T
J
= 25°C
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
B
, BASE CURRENT (A)
Figure 8. Base−Emitter Voltage
400
C
ob
, OUTPUT CAPACITANCE (pF)
C
ib
, INPUT CAPACITANCE (pF)
T
J
= 25°C
f
test
= 1 MHz
300
120
100
80
60
40
20
0
Figure 9. Collector Saturation Region
T
J
= 25°C
f
test
= 1 MHz
200
100
0
0
1
2
3
4
5
6
7
8
0
10
20
30
40
50
60
70
80
90 100
V
BE
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
120
f
Tau
, CURRENT−GAIN BANDWIDTH
PRODUCT (MHz)
100
80
60
40
20
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
T
J
= 25°C
f
test
= 1 MHz
V
CE
= 10 V
10
Figure 11. Output Capacitance
0.5 mS
1
100 mS
1 mS
10 mS
0.1
T
J
= 25°C
0.01
1
10
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
100
I
C
, COLLECTOR CURRENT (A)
Figure 12. Current−Gain Bandwidth Product
Figure 13. Safe Operating Area
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