ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
NSS1C200MZ4,
NSV1C200MZ4
100 V, 2.0 A, Low V
CE(sat)
PNP Transistor
http://onsemi.com
−100
VOLTS, 2.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
COLLECTOR
2,4
1
BASE
3
EMITTER
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
−
Continuous
Collector Current
−
Continuous
Collector Current
−
Peak
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
I
CM
Symbol
P
D
(Note 1)
Max
−100
−140
−7.0
1.0
2.0
3.0
Unit
Vdc
Vdc
Vdc
A
A
A
A
Y
W
1C200
G
SOT−223
CASE 318E
STYLE 1
MARKING
DIAGRAM
AYW
1C200G
1
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage
Temperature Range
Max
800
6.5
155
Unit
mW
mW/°C
°C/W
PIN ASSIGNMENT
4
C
R
qJA
(Note 1)
P
D
(Note 2)
B
1
C
2
E
3
2.0
15.6
64
−55
to
+150
W
mW/°C
°C/W
°C
Top View Pinout
R
qJA
(Note 2)
T
J
, T
stg
ORDERING INFORMATION
Device
NSS1C200MZ4T1G
NSV1C200MZ4T1G
NSS1C200MZ4T3G
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
†
1000/
Tape & Reel
4000/
Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 7.6 mm
2
, 1 oz. copper traces.
2. FR−4 @ 645 mm
2
, 1 oz. copper traces.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS1C200MZ4/D
©
Semiconductor Components Industries, LLC, 2013
March, 2013− Rev. 5
1
ONSEMI [ ON SEMICONDUCTOR ]
