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NSV1C200MZ4T1G 参数 Datasheet PDF下载

NSV1C200MZ4T1G图片预览
型号: NSV1C200MZ4T1G
PDF下载: 下载PDF文件 查看货源
内容描述: 100 V, 2.0 A ,低VCE ( sat)的PNP晶体管 [100 V, 2.0 A, Low VCE(sat) PNP Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 110 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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NSS1C200MZ4, NSV1C200MZ4
TYPICAL CHARACTERISTICS
500
400
300
200
−55°C
100
0
150°C
V
CE
= 2 V
h
FE
, DC CURRENT GAIN
400
300
200
−55°C
100
0
500
150°C
V
CE
= 4 V
h
FE
, DC CURRENT GAIN
25°C
25°C
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
1
I
C
/I
B
= 20
Figure 3. DC Current Gain
150°C
0.1
25°C
0.1
150°C
25°C
−55°C
0.001
0.01
0.1
1
10
−55°C
0.01
0.01
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
1.2
V
BE(sat)
, BASE−EMITTER SATURA-
TION VOLTAGE (V)
I
C
/I
B
= 10
1.0
0.8
−55°C
0.6
0.4
0.2
25°C
V
BE(sat)
, BASE−EMITTER SATURA-
TION VOLTAGE (V)
1.2
Figure 5. Collector−Emitter Saturation Voltage
I
C
/I
B
= 50
1.0
0.8
−55°C
0.6
0.4
0.2
25°C
150°C
150°C
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage
Figure 7. Base−Emitter Saturation Voltage
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3