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NE5517D 参数 Datasheet PDF下载

NE5517D图片预览
型号: NE5517D
PDF下载: 下载PDF文件 查看货源
内容描述: 双路运算跨导放大器 [Dual Operational Transconductance Amplifier]
分类和应用: 运算放大器放大器电路光电二极管
文件页数/大小: 14 页 / 187 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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NE5517, NE5517A, AU5517
ELECTRICAL CHARACTERISTICS
(Note 4)
AU5517/NE5517
Characteristic
Input Offset Voltage
Overtemperature Range
I
ABC
5.0
mA
DV
OS
/DT
V
OS
Including Diodes
Input Offset Change
Input Offset Current
DI
OS
/DT
Input Bias Current
Overtemperature Range
DI
B
/DT
Forward Transconductance
Overtemperature Range
g
M
Tracking
Peak Output Current
R
L
= 0, I
ABC
= 5.0
mA
R
L
= 0, I
ABC
= 500
mA
R
L
= 0, Overtemperature
Range
R
L
=
∞,
5.0
mA
I
ABC
500
mA
R
L
=
∞,
5.0
mA
I
ABC
500
mA
I
ABC
= 500
mA,
both channels
D
V
OS
/D V+
D
V
OS
/D V−
CMRR
80
±12
Referred to Input (Note 5)
20 Hz < f < 20 kHz
I
ABC
= 0, Input =
±4.0
V
I
ABC
= 0 (Refer to Test Circuit)
R
IN
B
W
Unity Gain Compensated
5
5
Refer to Buffer V
BE
Test
Circuit (Note 6)
SR
IN
BUFFER
VO
BUFFER
10
0.5
5.0
10
I
IN
I
OUT
350
300
V
OUT
+12
−12
I
CC
+14.2
−14.4
2.6
20
20
110
±13.5
100
0.02
0.2
26
2.0
50
0.4
5.0
10
0.5
5.0
100
100
10
4.0
150
150
80
±12
+12
−12
+14.2
−14.4
2.6
20
20
110
±13.5
100
0.02
0.2
26
2.0
50
0.4
5.0
10
5.0
4.0
150
150
dB
V
dB
nA
nA
kW
MHz
V/ms
mA
V
mV
mA
mV/V
Avg. TC of Input Current
g
M
6700
5400
Avg. TC of Input Offset Current
I
BIAS
Avg. TC of Input Offset Voltage
Diode Bias Current
(I
D
) = 500
mA
5.0
mA
I
ABC
500
mA
V
OS
I
OS
Test Conditions
Symbol
V
OS
Min
Typ
0.4
0.3
7.0
0.5
0.1
0.1
0.001
0.4
1.0
0.01
9600
0.3
5.0
500
650
3.0
350
300
13000
7700
4000
5.0
8.0
0.6
5
Max
5.0
5.0
Min
NE5517A
Typ
0.4
0.3
7.0
0.5
0.1
0.1
0.001
0.4
1.0
0.01
9600
0.3
5.0
500
V
7.0
650
12000
5.0
7.0
2.0
3.0
0.6
Max
2.0
5.0
2.0
Unit
mV
mV/°C
mV
mV
mA
mA/°C
mA
mA/°C
mmho
dB
mA
Peak Output Voltage
Positive
Negative
Supply Current
V
OS
Sensitivity
Positive
Negative
Common-mode Rejection
Ration
Common-mode Range
Crosstalk
Differential Input Current
Leakage Current
Input Resistance
Open-loop Bandwidth
Slew Rate
Buffer Input Current
Peak Buffer Output Voltage
DV
BE
of Buffer
4. These specifications apply for V
S
=
±15
V, T
amb
= 25°C, amplifier bias current (I
ABC
) = 500
mA,
Pins 2 and 15 open unless otherwise
specified. The inputs to the buffers are grounded and outputs are open.
5. These specifications apply for V
S
=
±15
V, I
ABC
= 500
mA,
R
OUT
= 5.0 kW connected from the buffer output to −V
S
and the input of the buffer
is connected to the transconductance amplifier output.
6. V
S
=
±15,
R
OUT
= 5.0 kW connected from Buffer output to −V
S
and 5.0
mA
I
ABC
500
mA.
http://onsemi.com
4