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NDF04N62ZG 参数 Datasheet PDF下载

NDF04N62ZG图片预览
型号: NDF04N62ZG
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道功率MOSFET的620 V, 1.8 ? [N-Channel Power MOSFET 620 V, 1.8 ]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 9 页 / 150 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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NDF04N62Z, NDP04N62Z, NDD04N62Z
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
−T−
F
Q
A
1 2 3
SEATING
PLANE
−B−
C
S
U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
H
K
−Y−
G
N
L
D
3 PL
M
J
R
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
0.25 (0.010)
B
M
Y
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
TO−220AB
CASE 221A−09
ISSUE AE
−T−
B
4
SEATING
PLANE
F
T
C
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
STYLE 5:
PIN 1.
2.
3.
4.
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