NDF04N62Z, NDP04N62Z, NDD04N62Z
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
NDP04N62Z
NDF04N62Z
NDD04N62Z
(Note 4) NDP04N62Z
(Note 4) NDF04N62Z
(Note 1) NDD04N62Z
(Note 4) NDD04N62Z−1
Symbol
R
qJC
Value
1.3
4.4
1.5
50
50
38
80
Unit
°C/W
Junction−to−Ambient Steady State
R
qJA
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain−to−Source Leakage Current
V
GS
= 0 V, I
D
= 1 mA
Reference to 25°C,
I
D
= 1 mA
V
DS
= 620 V, V
GS
= 0 V
V
GS
=
±20
V
V
GS
= 10 V, I
D
= 2.0 A
V
DS
= V
GS
, I
D
= 50
mA
V
DS
= 15 V, I
D
= 2.0 A
25°C
125°C
I
GSS
R
DS(on)
V
GS(th)
g
FS
C
iss
C
oss
C
rss
Q
g
V
DD
= 310 V, I
D
= 4.0 A,
V
GS
= 10 V
Q
gs
Q
gd
V
GP
R
g
t
d(on)
V
DD
= 310 V, I
D
= 4.0 A,
V
GS
= 10 V, R
G
= 5
Ω
t
r
t
d(off)
t
f
3.0
3.3
535
62
14
19
3.9
10
6.4
4.7
12
13
25
14
V
W
ns
nC
1.8
BV
DSS
DBV
DSS
/
DT
J
I
DSS
620
0.6
1
50
±10
2.0
4.5
mA
W
V
S
pF
V
V/°C
mA
Test Conditions
Symbol
Min
Typ
Max
Unit
Gate−to−Source Forward Leakage
ON CHARACTERISTICS
(Note 5)
Static Drain−to−Source
On−Resistance
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Plateau Voltage
Gate Resistance
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
SOURCE−DRAIN DIODE CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
4. Insertion mounted
5. Pulse Width
≤
380
ms,
Duty Cycle
≤
2%.
I
S
= 4.0 A, V
GS
= 0 V
V
GS
= 0 V, V
DD
= 30 V
I
S
= 4.0 A, di/dt = 100 A/ms
V
SD
t
rr
Q
rr
285
1.3
1.6
V
ns
mC
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