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NDF04N62ZG 参数 Datasheet PDF下载

NDF04N62ZG图片预览
型号: NDF04N62ZG
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道功率MOSFET的620 V, 1.8 ? [N-Channel Power MOSFET 620 V, 1.8 ]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 9 页 / 150 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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NDF04N62Z, NDP04N62Z,
NDD04N62Z
N-Channel Power MOSFET
620 V, 1.8
W
Features
Low ON Resistance
Low Gate Charge
100% Avalanche Tested
These Devices are Pb−Free and RoHS Compliant
http://onsemi.com
V
DSS
620 V
R
DS(ON)
(TYP) @ 2 A
1.8
Ω
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Continuous Drain Current
R
qJC
Continuous Drain Current
R
qJC
, T
A
= 100°C
Pulsed Drain Current,
V
GS
@ 10V
Power Dissipation R
qJC
(Note 1)
Gate−to−Source Voltage
Single Pulse Avalanche
Energy, I
D
= 4.0 A
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H.
30%,
T
A
= 25°C) (Figure 14)
Peak Diode Recovery
Continuous Source Current
(Body Diode)
Maximum Temperature for
Soldering Leads, 0.063″
(1.6 mm) from Case for
10 s Package Body for 10 s
Operating Junction and
Storage Temperature Range
Symbol
V
DSS
I
D
I
D
I
DM
P
D
V
GS
E
AS
V
esd
V
ISO
4500
4.4
(Note 2)
2.8
(Note 2)
18
(Note 2)
28
NDF
NDP
620
4.4
2.8
18
96
±30
120
3000
4.1
2.6
16
83
NDD
Unit
V
A
A
G (1)
A
W
V
mJ
V
V
S (3)
N−Channel
D (2)
4
4
dv/dt
I
S
T
L
4.5 (Note 3)
4.0
300
260
V/ns
A
°C
T
PKG
3
3
3
3
DPAK
TO−220FP TO−220AB
IPAK
CASE 221D CASE 221A CASE 369D CASE 369AA
STYLE 2
STYLE 1
STYLE 5
STYLE 2
2
2
1
2
1
1
1 2
T
J
, T
stg
−55
to 150
°C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Limited by maximum junction temperature
3. I
SD
= 4.0 A, di/dt
100 A/ms, V
DD
BV
DSS
, T
J
= +150°C
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
©
Semiconductor Components Industries, LLC, 2010
April, 2010
Rev. 1
1
Publication Order Number:
NDF04N62Z/D