NCV7703
ELECTRICAL CHARACTERISTICS
(−40°C ≤ T ≤ 150°C, 5.5 V ≤ V ≤ 40 V, 3 V ≤ V ≤ 5.25 V, EN = V , unless otherwise specified)
J
S
CC
CC
OUTPUTS
Sink Leakage Current
OUTx = V = 40 V, EN = 0 V
−
−
−
−
300
10
mA
S
CSB = V
CC
0 V < V < 5.25 V
CC
OUTx = V = 13.2 V, EN = 0 V
S
CSB = V
CC
0 V < V < 5.25 V, T = 25°C
CC
J
Over Current Shutdown Threshold
Current Limit
Source
Sink
−1.8
−1.4
−1.0
A
A
1.0
1.4
1.8
Source
Sink
−5.0
2.0
−3.0
3.0
−2.0
5.0
Under Load Detection Threshold
Source
Sink
−15
−7.0
−3.0
mA
V
3.0
7.0
15
Power Transistor Body Diode Forward Voltage I = 500 mA
−
0.9
1.3
f
4. Thermal characteristics are not subject to production test
5. For temperatures above 85°C, refer to Figure 4.
6. For temperatures above 85°C, refer to Figure 5.
http://onsemi.com
6