NCR169D
1000
1000
100
LATCHING CURRENT (
m
A)
95
110
HOLDING CURRENT (
m
A)
100
10
–40 –25 –10
5
20 35 50 65 80
T
J
, JUNCTION TEMPERATURE (°C)
10
–40 –25 –10
5
20 35 50 65 80
T
J
, JUNCTION TEMPERATURE (°C)
95
110
Figure 3. Typical Holding Current versus
Junction Temperature
Figure 4. Typical Latching Current versus
Junction Temperature
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
I T, INSTANTANEOUS ON-STATE CURRENT (AMPS)
120
110
100
90
DC
80
70
60
50
40
0
0.1
30°
60°
90°
120°
0.5
180°
10
MAXIMUM @ T
J
= 25°C
MAXIMUM @ T
J
= 110°C
1
0.2
0.3
0.4
I
T(RMS)
, RMS ON-STATE CURRENT (AMPS)
0.1
0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 5. Typical RMS Current Derating
Figure 6. Typical On–State Characteristics
http://onsemi.com
4
ONSEMI [ ON SEMICONDUCTOR ]
