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NCR169DRLRM 参数 Datasheet PDF下载

NCR169DRLRM图片预览
型号: NCR169DRLRM
PDF下载: 下载PDF文件 查看货源
内容描述: 通用敏感栅硅控整流器 [General Purpose Sensitive Gate Silicon Controlled Rectifier]
分类和应用:
文件页数/大小: 8 页 / 71 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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NCR169D
Advance Information
General Purpose
Sensitive Gate
Silicon Controlled Rectifier
Reverse Blocking Thyristor
PNPN device designed for line-powered general purpose
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in a cost effective plastic TO-226AA package.
Sensitive Gate Allows Direct Triggering by Microcontrollers and
Other Logic Circuits
On–State Current Rating of 0.8 Amperes RMS at 80°C
Surge Current Capability – 10 Amperes
Immunity to dV/dt – 20 V/µsec Minimum at 110°C
Glass-Passivated Surface for Reliability and Uniformity
Device Marking: NCR169D, Date Code
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage (Note 1.)
(T
J
=
*40
to 110°C, Sine Wave, 50 to
60 Hz; Gate Open)
On-State RMS Current
(T
C
= 80°C) 180° Conduction Angles
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
T
J
= 25°C)
Circuit Fusing Consideration (t = 10 ms)
Forward Peak Gate Power
(T
A
= 25°C, Pulse Width
v
1.0
µ
s)
Forward Average Gate Power
(T
A
= 25°C, t = 20 ms)
Forward Peak Gate Current
(T
A
= 25°C, Pulse Width
v
1.0
µ
s)
Reverse Peak Gate Voltage
(T
A
= 25°C, Pulse Width
v
1.0
µ
s)
Operating Junction Temperature Range
@ Rate V
RRM
and V
DRM
Storage Temperature Range
Symbol
V
DRM,
V
RRM
I
T(RMS)
I
TSM
Value
400
Unit
Volts
TO–92
(TO–226AA)
CASE 029
STYLE 10
K
G
http://onsemi.com
SCR
0.8 AMPERES RMS
400 VOLTS
G
A
K
MARKING
DIAGRAM
NCR
169D
YWW
0.8
10
Amp
Amps
A
Y
= Year
WW = Work Week
1 2 3
I
2
t
P
GM
P
G(AV)
I
GM
V
GRM
T
J
T
stg
0.415
0.1
0.10
1.0
5.0
–40 to
110
–40 to
150
A
2
s
Watt
PIN ASSIGNMENT
Watt
Amp
Volts
°C
°C
1
2
3
Cathode
Gate
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
©
Semiconductor Components Industries, LLC, 2000
1
December, 2000 – Rev. 0
Publication Order Number:
NCR169D/D