NCR169D
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance – Junction to Case
– Junction to Ambient
Lead Solder Temperature
(t1/16″ from case, 10 secs max)
Symbol
R
θJC
R
θJA
T
L
Max
75
200
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or
Reverse Blocking Current (Note 1.)
(V
D
= Rated V
DRM
and V
RRM
; R
GK
= 1.0 kΩ)
I
DRM
, I
RRM
T
C
= 25°C
T
C
= 110°C
–
–
–
–
10
0.1
µA
mA
ON CHARACTERISTICS
Peak Forward On–State Voltage
(*)
(I
TM
= 1.0 Amp Peak @ T
A
= 25°C)
Gate Trigger Current (Continuous dc) (Note 2.)
(V
AK
= 12 V, R
L
= 100 Ohms)
Holding Current (Note 2.)
(V
AK
= 12 V, I
GT
= 0.5 mA)
Latch Current
(V
AK
= 12 V, I
GT
= 0.5 mA, R
GK
= 1.0 k)
Gate Trigger Voltage (Continuous dc) (Note 2.)
(V
AK
= 12 V, R
L
= 100 Ohms, I
GT
= 10 mA)
T
C
= 25°C
T
C
= 25°C
T
C
= –40°C
T
C
= 25°C
T
C
= –40°C
T
C
= 25°C
T
C
= –40°C
V
TM
I
GT
I
H
I
L
V
GT
–
–
–
–
–
–
–
–
–
40
0.5
–
0.6
–
0.62
–
1.7
200
5.0
10
10
15
0.8
1.2
Volts
µA
mA
mA
Volts
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, R
GK
= 1000 Ohms,
T
J
= 110°C)
Critical Rate of Rise of On–State Current
(I
PK
= 20 A; Pw = 10
µsec;
diG/dt = 1.0 A/µsec, Igt = 20 mA)
*Indicates Pulse Test: Pulse Width
≤
1.0 ms, Duty Cycle
≤
1%.
1. R
GK
= 1000 Ohms included in measurement.
2. Does not include R
GK
in measurement.
dV/dt
20
35
–
V/µs
di/dt
–
–
50
A/µs
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