MMBT5550LT1 MMBT5551LT1
2.5
θ
V, TEMPERATURE COEFFICIENT (mV/
°
C)
2.0
1.5
1.0
0.5
0
– 0.5
– 1.0
– 1.5
– 2.0
– 2.5
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10 20 30
IC, COLLECTOR CURRENT (mA)
50
100
10.2 V
Vin
10
µs
INPUT PULSE
tr, tf
≤
10 ns
DUTY CYCLE = 1.0%
0.25
µF
VBB
– 8.8 V
100
RB
5.1 k
Vin
100
1N914
VCC
30 V
3.0 k
RC
Vout
TJ = – 55°C to +135°C
q
VC for VCE(sat)
q
VB for VBE(sat)
Values Shown are for IC @ 10 mA
Figure 5. Temperature Coefficients
Figure 6. Switching Time Test Circuit
100
70
50
30
C, CAPACITANCE (pF)
1000
TJ = 25°C
500
300
t, TIME (ns)
200
100
50
Cobo
30
20
10
0.2 0.3 0.5
td @ VEB(off) = 1.0 V
VCC = 120 V
tr @ VCC = 30 V
IC/IB = 10
TJ = 25°C
tr @ VCC = 120 V
20
10
7.0
5.0
3.0
2.0
1.0
0.2
Cibo
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
1.0
VR, REVERSE VOLTAGE (VOLTS)
20 30 50
2.0 3.0 5.0 10
IC, COLLECTOR CURRENT (mA)
100
200
Figure 7. Capacitances
Figure 8. Turn–On Time
5000
3000
2000
tf @ VCC = 30 V
1000
t, TIME (ns)
500
300
200
100
50
0.2 0.3 0.5
ts @ VCC = 120 V
tf @ VCC = 120 V
IC/IB = 10
TJ = 25°C
20 30 50
1.0 2.0 3.0 5.0
10
IC, COLLECTOR CURRENT (mA)
100
200
Figure 9. Turn–Off Time
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ONSEMI [ ON SEMICONDUCTOR ]
