MMBT5550LT1 MMBT5551LT1
500
300
200
h FE, DC CURRENT GAIN
100
– 55°C
50
30
20
10
7.0
5.0
0.1
TJ = 125°C
25°C
VCE = 1.0 V
VCE = 5.0 V
0.2
0.3
0.5
0.7
1.0
3.0
2.0
5.0
7.0
IC, COLLECTOR CURRENT (mA)
10
20
30
50
70
100
Figure 1. DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
IB, BASE CURRENT (mA)
2.0
5.0
10
20
50
IC = 1.0 mA
10 mA
30 mA
100 mA
Figure 2. Collector Saturation Region
101
VCE = 30 V
IC, COLLECTOR CURRENT (
µ
A)
100
10–1
10–2
10–3
10–4
10–5
0.4
TJ = 125°C
V, VOLTAGE (VOLTS)
1.0
TJ = 25°C
0.8
IC = ICES
VBE(sat) @ IC/IB = 10
0.6
75°C
REVERSE
25°C
FORWARD
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.3
0.2 0.1
0
0.1
0.2 0.3
0.4
VBE, BASE–EMITTER VOLTAGE (VOLTS)
0.5
0.6
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30
IC, COLLECTOR CURRENT (mA)
50
100
Figure 3. Collector Cut–Off Region
Figure 4. “On” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
ONSEMI [ ON SEMICONDUCTOR ]
