MMBT5550LT1 MMBT5551LT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
hFE
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
VCE(sat)
Both Types
MMBT5550
MMBT5551
VBE(sat)
Both Types
MMBT5550
MMBT5551
—
—
—
1.0
1.2
1.0
—
—
—
0.15
0.25
0.20
Vdc
60
80
60
80
20
30
—
—
250
250
—
—
Vdc
—
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 50 mAdc, VCE = 5.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ONSEMI [ ON SEMICONDUCTOR ]
