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MMBT5401LT1G 参数 Datasheet PDF下载

MMBT5401LT1G图片预览
型号: MMBT5401LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 高压晶体管( PNP硅) [High Voltage Transistor(PNP Silicon)]
分类和应用: 晶体小信号双极晶体管开关光电二极管高压
文件页数/大小: 6 页 / 95 K
品牌: ONSEMI [ ONSEMI ]
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MMBT5401LT1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
V
Vdc  
Vdc  
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
(I = −1.0 mAdc, I = 0)  
−150  
−160  
−5.0  
C
B
CollectorBase Breakdown Voltage  
(I = −100 mAdc, I = 0)  
V
V
C
E
EmitterBase Breakdown Voltage  
(I = −10 mAdc, I = 0)  
E
C
Collector Cutoff Current  
(V = −120 Vdc, I = 0)  
I
CES  
−50  
−50  
nAdc  
mAdc  
CB  
E
(V = −120 Vdc, I = 0, T = 100°C)  
CB  
E
A
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = −1.0 mAdc, V = −5.0 Vdc)  
50  
60  
50  
240  
C
CE  
(I = −10 mAdc, V = −5.0 Vdc)  
C
CE  
(I = −50 mAdc, V = −5.0 Vdc)  
C
CE  
CollectorEmitter Saturation Voltage  
(I = −10 mAdc, I = −1.0 mAdc)  
V
Vdc  
Vdc  
CE(sat)  
−0.2  
−0.5  
C
B
(I = −50 mAdc, I = −5.0 mAdc)  
C
B
BaseEmitter Saturation Voltage  
(I = −10 mAdc, I = −1.0 mAdc)  
V
BE(sat)  
−1.0  
−1.0  
C
B
(I = −50 mAdc, I = −5.0 mAdc)  
C
B
SMALL−SIGNAL CHARACTERISTICS  
CurrentGain — Bandwidth Product  
f
MHz  
pF  
T
(I = −10 mAdc, V = −10 Vdc, f = 100 MHz)  
100  
300  
6.0  
200  
8.0  
C
CE  
Output Capacitance  
C
obo  
(V = −10 Vdc, I = 0, f = 1.0 MHz)  
CB  
E
Small Signal Current Gain  
h
fe  
(I = −1.0 mAdc, V = −10 Vdc, f = 1.0 kHz)  
40  
C
CE  
Noise Figure  
NF  
dB  
(I = −200 mAdc, V = −5.0 Vdc, R = 10 W, f = 1.0 kHz)  
C
CE  
S
http://onsemi.com  
2
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