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MMBT2222A 参数 Datasheet PDF下载

MMBT2222A图片预览
型号: MMBT2222A
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管NPN硅 [General Purpose Transistors NPN Silicon]
分类和应用: 晶体晶体管开关光电二极管IOT
文件页数/大小: 8 页 / 128 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBT2222LT1 MMBT2222ALT1
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (4)
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Output Admittance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(I
E
= 20 mAdc, V
CB
= 20 Vdc, f = 31.8 MHz)
Noise Figure
(I
C
= 100
mAdc,
V
CE
= 10 Vdc, R
S
= 1.0 kΩ, f = 1.0 kHz)
MMBT2222
MMBT2222A
h
ie
MMBT2222A
MMBT2222A
h
re
MMBT2222A
MMBT2222A
h
fe
MMBT2222A
MMBT2222A
h
oe
MMBT2222A
MMBT2222A
rb, C
c
MMBT2222A
NF
MMBT2222A
4.0
150
dB
5.0
25
35
200
ps
50
75
300
375
mmhos
8.0
4.0
2.0
0.25
8.0
1.25
X 10
–4
f
T
MMBT2222
MMBT2222A
C
obo
C
ibo
30
25
kΩ
8.0
pF
250
300
pF
MHz
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 30 Vdc, V
BE(off)
= –0.5 Vdc,
0.5
I
C
= 150 mAdc, I
B1
= 15 mAdc)
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
d
t
r
t
s
t
f
10
25
225
60
ns
ns
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
4. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
http://onsemi.com
3