ON Semiconductort
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
2222
30
60
5.0
600
2222A
40
75
6.0
Unit
Vdc
MMBT2222LT1
MMBT2222ALT1*
*ON Semiconductor Preferred Device
3
Vdc
Vdc
mAdc
1
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
CASE 318–08, STYLE 6
SOT–23 (TO–236)
COLLECTOR
3
1
BASE
2
EMITTER
Symbol
Min
Max
Unit
DEVICE MARKING
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage (I
C
= 10
mAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage (I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current (V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
Collector Cutoff Current (V
CB
= 50 Vdc, I
E
= 0)
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 125°C)
(V
CB
= 60 Vdc, I
E
= 0, T
A
= 125°C)
Emitter Cutoff Current (V
EB
= 3.0 Vdc, I
C
= 0)
Base Cutoff Current (V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
1. FR–5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
MMBT2222A
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
30
40
60
75
5.0
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
10
0.01
0.01
10
10
100
20
Vdc
Vdc
Vdc
nAdc
µAdc
I
EBO
I
BL
nAdc
nAdc
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 1
Publication Order Number:
MMBT2222LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
