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MMBT2222ALT1G 参数 Datasheet PDF下载

MMBT2222ALT1G图片预览
型号: MMBT2222ALT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General Purpose Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 8 页 / 129 K
品牌: ONSEMI [ ONSEMI ]
 浏览型号MMBT2222ALT1G的Datasheet PDF文件第1页浏览型号MMBT2222ALT1G的Datasheet PDF文件第2页浏览型号MMBT2222ALT1G的Datasheet PDF文件第4页浏览型号MMBT2222ALT1G的Datasheet PDF文件第5页浏览型号MMBT2222ALT1G的Datasheet PDF文件第6页浏览型号MMBT2222ALT1G的Datasheet PDF文件第7页浏览型号MMBT2222ALT1G的Datasheet PDF文件第8页  
C * < 10 pF  
S
−2 V  
              
MMBT2222LT1, MMBT2222ALT1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
SMALL−SIGNAL CHARACTERISTICS  
Output Admittance  
h
oe  
mmhos  
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)  
MMBT2222A  
MMBT2222A  
5.0  
25  
35  
200  
C
CE  
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)  
C
CE  
Collector Base Time Constant  
rb, C  
NF  
ps  
c
(I = 20 mAdc, V = 20 Vdc, f = 31.8 MHz)  
MMBT2222A  
150  
4.0  
E
CB  
Noise Figure  
dB  
(I = 100 mAdc, V = 10 Vdc, R = 1.0 kW, f = 1.0 kHz) MMBT2222A  
C
CE  
S
SWITCHING CHARACTERISTICS (MMBT2222A only)  
Delay Time  
t
t
10  
25  
d
(V = 30 Vdc, V  
= 0.5 Vdc,  
BE(off)  
B1  
CC  
ns  
ns  
I
C
= 150 mAdc, I = 15 mAdc)  
Rise Time  
Storage Time  
Fall Time  
t
r
225  
60  
s
(V = 30 Vdc, I = 150 mAdc,  
CC  
C
I
B1  
= I = 15 mAdc)  
B2  
t
f
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.  
4. f is defined as the frequency at which |h | extrapolates to unity.  
T
fe  
SWITCHING TIME EQUIVALENT TEST CIRCUITS  
+ꢀ30 V  
200  
+ꢀ30 V  
1.0 to 100 ms,  
1.0 to 100 ms,  
200  
+16 V  
0
DUTY CYCLE 2.0%  
+16 V  
0
DUTY CYCLE 2.0%  
1 k  
< 20 ns  
1N914  
−14 V  
1 kW  
C * < 10 pF  
S
< 2 ns  
−ꢀ4 V  
Scope rise time < 4 ns  
*Total shunt capacitance of test jig, connectors, and oscilloscope.  
Figure 1. Turn−On Time  
Figure 2. Turn−Off Time  
http://onsemi.com  
3
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