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MMBT2222ALT1G 参数 Datasheet PDF下载

MMBT2222ALT1G图片预览
型号: MMBT2222ALT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General Purpose Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 8 页 / 129 K
品牌: ONSEMI [ ONSEMI ]
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MMBT2222LT1, MMBT2222ALT1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage (I = 10 mAdc, I = 0)  
MMBT2222  
MMBT2222A  
V
30  
40  
Vdc  
Vdc  
Vdc  
C
B
(BR)CEO  
(BR)CBO  
(BR)EBO  
CollectorBase Breakdown Voltage (I = 10 mAdc, I = 0)  
MMBT2222  
MMBT2222A  
V
V
60  
75  
C
E
EmitterBase Breakdown Voltage (I = 10 mAdc, I = 0)  
MMBT2222  
MMBT2222A  
5.0  
6.0  
E
C
Collector Cutoff Current (V = 60 Vdc, V  
= 3.0 Vdc)  
MMBT2222A  
I
10  
nAdc  
CE  
EB(off)  
CEX  
Collector Cutoff Current (V = 50 Vdc, I = 0)  
MMBT2222  
MMBT2222A  
MMBT2222  
MMBT2222A  
I
0.01  
0.01  
10  
mAdc  
CB  
E
CBO  
(V = 60 Vdc, I = 0)  
CB  
E
(V = 50 Vdc, I = 0, T = 125°C)  
CB  
E
A
10  
(V = 60 Vdc, I = 0, T = 125°C)  
CB  
E
A
Emitter Cutoff Current (V = 3.0 Vdc, I = 0)  
MMBT2222A  
MMBT2222A  
I
EBO  
100  
20  
nAdc  
nAdc  
EB  
C
Base Cutoff Current (V = 60 Vdc, V  
= 3.0 Vdc)  
I
BL  
CE  
EB(off)  
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = 0.1 mAdc, V = 10 Vdc)  
35  
50  
75  
35  
100  
50  
30  
40  
300  
C
CE  
(I = 1.0 mAdc, V = 10 Vdc)  
C
CE  
(I = 10 mAdc, V = 10 Vdc)  
C
CE  
(I = 10 mAdc, V = 10 Vdc, T = −55°C)  
MMBT2222A only  
C
CE  
CE  
A
(I = 150 mAdc, V = 10 Vdc) (Note 3)  
C
(I = 150 mAdc, V = 1.0 Vdc) (Note 3)  
C
CE  
(I = 500 mAdc, V = 10 Vdc) (Note 3)  
C
MMBT2222  
MMBT2222A  
CE  
CollectorEmitter Saturation Voltage (Note 3)  
(I = 150 mAdc, I = 15 mAdc)  
V
Vdc  
Vdc  
CE(sat)  
MMBT2222  
MMBT2222A  
0.4  
0.3  
C
B
(I = 500 mAdc, I = 50 mAdc)  
MMBT2222  
MMBT2222A  
1.6  
1.0  
C
B
BaseEmitter Saturation Voltage (Note 3)  
(I = 150 mAdc, I = 15 mAdc)  
V
BE(sat)  
MMBT2222  
MMBT2222A  
0.6  
1.3  
1.2  
C
B
(I = 500 mAdc, I = 50 mAdc)  
MMBT2222  
MMBT2222A  
2.6  
2.0  
C
B
SMALL−SIGNAL CHARACTERISTICS  
CurrentGain − Bandwidth Product (Note 4)  
f
T
MHz  
(I = 20 mAdc, V = 20 Vdc, f = 100 MHz)  
MMBT2222  
MMBT2222A  
250  
300  
C
CE  
Output Capacitance  
(V = 10 Vdc, I = 0, f = 1.0 MHz)  
C
pF  
pF  
obo  
8.0  
CB  
E
Input Capacitance  
C
ibo  
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)  
MMBT2222  
MMBT2222A  
30  
25  
EB  
C
Input Impedance  
h
kW  
ie  
re  
fe  
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)  
MMBT2222A  
MMBT2222A  
2.0  
0.25  
8.0  
1.25  
C
CE  
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)  
C
CE  
−4  
Voltage Feedback Ratio  
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)  
h
h
X 10  
MMBT2222A  
MMBT2222A  
8.0  
4.0  
C
CE  
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)  
C
CE  
SmallSignal Current Gain  
(I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz)  
MMBT2222A  
MMBT2222A  
50  
75  
300  
375  
C
CE  
(I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz)  
C
CE  
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.  
4. f is defined as the frequency at which |h | extrapolates to unity.  
T
fe  
http://onsemi.com  
2
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