MMBT2222LT1, MMBT2222ALT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage (I
C
= 10
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage (I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current (V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
Collector Cutoff Current (V
CB
= 50 Vdc, I
E
= 0)
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 125°C)
(V
CB
= 60 Vdc, I
E
= 0, T
A
= 125°C)
Emitter Cutoff Current (V
EB
= 3.0 Vdc, I
C
= 0)
Base Cutoff Current (V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, T
A
= −55°C)
(I
C
= 150 mAdc, V
CE
= 10 Vdc) (Note 3)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc) (Note 3)
(I
C
= 500 mAdc, V
CE
= 10 Vdc) (Note 3)
Collector −Emitter Saturation Voltage (Note 3)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
Base −Emitter Saturation Voltage (Note 3)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 4)
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Small −Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
MMBT2222
MMBT2222A
h
ie
MMBT2222A
MMBT2222A
h
re
MMBT2222A
MMBT2222A
h
fe
MMBT2222A
MMBT2222A
50
75
300
375
−
−
8.0
4.0
−
2.0
0.25
8.0
1.25
X 10
− 4
f
T
MMBT2222
MMBT2222A
C
obo
−
C
ibo
−
−
30
25
kW
8.0
pF
250
300
−
−
pF
MHz
h
FE
35
50
75
35
100
50
30
40
V
CE(sat)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
V
BE(sat)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
−
0.6
−
−
1.3
1.2
2.6
2.0
−
−
−
−
0.4
0.3
1.6
1.0
Vdc
−
−
−
−
300
−
−
−
Vdc
−
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
MMBT2222A
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
30
40
60
75
5.0
6.0
−
−
−
−
−
−
−
−
−
−
−
−
−
10
0.01
0.01
10
10
100
20
Vdc
Vdc
Vdc
nAdc
mAdc
Symbol
Min
Max
Unit
I
EBO
I
BL
nAdc
nAdc
MMBT2222A only
MMBT2222
MMBT2222A
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
4. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
http://onsemi.com
2
ONSEMI [ ON SEMICONDUCTOR ]
