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MC74VHCT245AM 参数 Datasheet PDF下载

MC74VHCT245AM图片预览
型号: MC74VHCT245AM
PDF下载: 下载PDF文件 查看货源
内容描述: 八路总线收发器 [Octal Bus Transceiver]
分类和应用: 总线驱动器总线收发器逻辑集成电路光电二极管
文件页数/大小: 6 页 / 167 K
品牌: ONSEMI [ ONSEMI ]
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MC74VHCT245A  
MAXIMUM RATINGS*  
V
DC Supply Voltage  
DC Input Voltage  
DC Output Voltage  
– 0.5 to + 7.0  
– 0.5 to + 7.0  
– 0.5 to + 7.0  
V
V
V
This device contains protection  
circuitry to guard against damage  
due to high static voltages or electric  
fields. However, precautions must  
be taken to avoid applications of any  
voltage higher than maximum rated  
voltages to this high–impedance cir-  
CC  
V
in  
V
Outputs in 3–State  
I/O  
High or Low State – 0.5 to V  
CC  
+ 0.5  
I
I
Input Diode Current  
– 20  
mA  
mA  
mA  
mA  
mW  
IK  
cuit. For proper operation, V and  
in  
Output Diode Current (V  
< GND; V  
OUT  
> V )  
CC  
± 20  
± 25  
± 75  
OK  
OUT  
V
should be constrained to the  
out  
I
DC Output Current, per Pin  
DC Supply Current, V and GND Pins  
out  
range GND (V or V  
)
V
.
in out  
CC  
Unused inputs must always be  
tied to an appropriate logic voltage  
I
CC  
CC  
P
Power Dissipation in Still Air,  
SOIC Packages†  
TSSOP Package†  
500  
450  
D
level (e.g., either GND or V  
).  
CC  
Unused outputs must be left open.  
T
stg  
Storage Temperature  
– 65 to + 150  
C
* Absolute maximum continuous ratings are those values beyond which damage to the device  
may occur. Exposure to these conditions or conditions beyond those indicated may adversely  
affect device reliability. Functional operation under absolute–maximum–rated conditions is not  
implied.  
†Derating — SOIC Packages: – 7 mW/ C from 65 to 125 C  
TSSOP Package: – 6.1 mW/ C from 65 to 125 C  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
4.5  
0
Max  
5.5  
5.5  
5.5  
Unit  
V
V
CC  
DC Supply Voltage  
DC Input Voltage  
DC Output Voltage  
V
in  
V
V
I/O  
Outputs in 3–State  
High or Low State  
0
0
V
V
CC  
T
Operating Temperature  
Input Rise and Fall Time  
– 40  
0
+ 85  
20  
C
A
t , t  
r f  
V
CC  
=5.0V ±0.5V  
ns/V  
DC ELECTRICAL CHARACTERISTICS  
T
A
= 25°C  
T = – 40 to 85°C  
A
V
CC  
V
Symbol  
Parameter  
Test Conditions  
Unit  
Min  
Typ  
Max  
Min  
Max  
V
IH  
Minimum High–Level  
Input Voltage  
4.5 to  
5.5  
2.0  
2.0  
V
V
Maximum Low–Level  
Input Voltage  
4.5 to  
5.5  
0.8  
0.8  
V
V
IL  
V
OH  
Minimum High–Level  
Output Voltage  
I
= – 50µA  
4.5  
4.5  
4.4  
4.5  
0.0  
4.4  
OH  
I
= – 8mA  
3.94  
3.80  
V
in  
= V or V  
OH  
IH  
IL  
V
OL  
Maximum Low–Level  
Output Voltage  
I
= 50µA  
4.5  
0.1  
0.1  
V
OL  
I
= 8mA  
4.5  
0.36  
± 0.1  
0.44  
± 1.0  
V
in  
= V or V  
OL  
IH  
IL  
I
in  
Maximum Input  
Leakage Current  
V
V
= 5.5 V or GND  
0 to 5.5  
µA  
µA  
µA  
mA  
µA  
in  
I
Maximum 3–State  
Leakage Current  
= V or V  
IL  
5.5  
5.5  
5.5  
0
± 0.25  
4.0  
± 2.5  
40.0  
1.50  
5.0  
OZ  
CC  
in  
IH  
or GND  
V
out  
= V  
CC  
or GND  
CC  
I
Maximum Quiescent  
Supply Current  
V
in  
= V  
I
Quiescent Supply  
Current  
Per Input: V = 3.4V  
IN  
Other Input: V  
1.35  
0.5  
CCT  
or GND  
CC  
I
Output Leakage  
Current  
V
OUT  
= 5.5V  
OPD  
MOTOROLA  
2
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