NPN Multi-Chip Darlington Transistor
(continued)
Typical Characteristics (continued)
Collector-Emitter Breakdown
Voltage with Resistance
Collector-Cutoff Current
vs Ambient Temperature
Between Emitter-Base
100
62.5
VCB= 30V
62
61.5
61
10
1
60.5
60
0.1
59.5
0.1
0.01
1
10
100
1000
25
50
75
100
125
RESISTANCE (k
)
Ω
TA- AMBIENT TEMPERATURE ( C)
°
Gain Bandwidth Product
vs Collector Current
Input and Output Capacitance
vs Reverse Voltage
500
f = 1.0 MHz
V
= 5V
ce
20
10
5
400
300
200
100
0
Cib
Cob
4
2
0.1
1
10
100
1
10
20
50
100 150
V
- COLLECTOR VOLTAGE(V)
IC - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
1
SOT-6
0.75
0.5
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
ONSEMI [ ONSEMI ]
