NPN Multi-Chip Darlington Transistor
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CES
Collector-Emitter Breakdown Voltage
30
V
I
C = 100 µA, IB = 0
ICBO
Collector-Cutoff Current
Emitter-Cutoff Current
VCB = 30 V, IE = 0
VEB = 10 V, IC = 0
100
100
nA
nA
IEBO
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 10 mA, VCE = 5.0 V
10K
20K
I
C = 100 mA, VCE = 5.0 V
Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA
1.5
2.0
V
V
VCE(sat)
VBE(on)
Base-Emitter On Voltage
IC = 100 mA, VCE = 5.0 V
SMALL SIGNAL CHARACTERISTICS
Small Signal Current Gain
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
1.25
MHz
hfe
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
250
1.6
1.2
0.8
0.4
0
VCE = 5V
β = 1000
200
125 °C
150
- 40 °C
25 °C
100
25°C
125 °C
- 40 °C
50
0
0.001
0.01
0.1
1
1
10
100
1000
I C - COLLECTOR CURRENT (A)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base Emitter ON Voltage vs
Collector Current
2
2
β = 1000
- 40 °C
1.6
1.2
0.8
0.4
0
1.6
1.2
0.8
0.4
0
- 40 °C
25 °C
25 °C
125 °C
125 °C
VCE = 5V
1
10
100
1000
1
10
100
1000
IC - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
ONSEMI [ ONSEMI ]
