Typical Characteristics
1000
100
10
1000
100
10
If R = 0
= (L)(I )/(1.3*RATED BV
t
AV
- V
)
AS
DSS
DD
If R
AV
≠ 0
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AS
100us
STARTING TJ = 25oC
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
STARTING TJ = 150oC
1
1ms
SINGLE PULSE
T
= MAX RATED
10ms
100ms
J
o
T
C
= 25
C
1
0.1
0.1
0.001
0.01
0.1
1
10
100
1000
200
100
1
10
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to ON Semiconductor Application Notes AN7514
and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
300
300
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
100
250
VDD = 5V
200
TJ = 175 o
C
10
1
TJ = 25oC
150
100
50
TJ = 25 oC
TJ = 175oC
TJ = -55oC
0
0.1
2
3
4
5
6
7
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
300
300
VGS
VGS
15V Top
10V
8V
7V
6V
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
250
200
150
100
50
250
200
80μs PULSE WIDTH
Tj=25oC
5.5V
5V Bottom
150
100
50
80μs PULSE WIDTH
Tj=175oC
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
www.onsemi.com
4
ONSEMI [ ONSEMI ]
