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FDC6401N 参数 Datasheet PDF下载

FDC6401N图片预览
型号: FDC6401N
PDF下载: 下载PDF文件 查看货源
内容描述: [双 N 沟道,PowerTrench® MOSFET,2.5V 指定,20V,3.0A,70mΩ]
分类和应用:
文件页数/大小: 7 页 / 327 K
品牌: ONSEMI [ ONSEMI ]
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FDC6401N  
TYPICAL CHARACTERISTICS  
12  
10  
2
V
3.5 V  
= 4.5 V  
3.0 V  
GS  
V
GS  
= 2.0 V  
2.5 V  
1.8  
1.6  
1.4  
8
2.0 V  
6
4
2.5 V  
3.0 V  
1.2  
1
3.5 V  
4.5 V  
2
0
0.8  
4
10  
2
3
0
12  
2
6
8
0
1
I , Drain Current (A)  
D
V
DS  
, DrainSource Voltage (V)  
Figure 1. OnRegion Characteristics  
Figure 2. OnResistance Variation with Drain  
Current and Gate Voltage  
1.6  
1.4  
1.2  
1
0.22  
0.18  
I
D
= 1.5 A  
I
V
= 3.0 A  
D
= 4.5 V  
GS  
0.14  
0.1  
T = 125°C  
A
T = 25°C  
A
0.06  
0.8  
0.6  
0.02  
50  
25  
0
25  
50  
75  
100  
125  
150  
1
2
3
5
4
V
GS  
, Gate to Source Voltage (V)  
T , Junction Temperature (5C)  
J
Figure 3. OnResistance Variation with Temperature  
Figure 4. OnResistance Variation  
with GatetoSource Voltage  
10  
100  
10  
1
25°C  
V
GS  
= 0 V  
T = 55°C  
A
V
DS  
= 5 V  
8
6
125°C  
T = 125°C  
A
25°C  
0.1  
0.01  
55°C  
4
2
0
0.001  
0.0001  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0.5  
1
1.5  
2
2.5  
3
V
GS  
, Gate to Source Voltage (V)  
V
SD  
, Body Diode Forward Voltage (V)  
Figure 5. Transfer Characteristics  
Figure 6. Body Diode Forward Voltage Variation  
with Source Current and Temperature  
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